bas 19 ... bas 21 oct-07-1999 1 silicon switching diodes high-speed, high-voltage switching applications 1 2 3 vps05161 13 eha07002 type marking pin configuration package bas 19 bas 20 bas 21 jps jrs jss 1 = a 1 = a 1 = a 2 = n.c. 2 = n.c. 2 = n.c. 3 = c 3 = c 3 = c sot-23 sot-23 sot-23 maximum ratings parameter bas 19 symbol unit bas 21 bas 20 v r 100 diode reverse voltage 150 200 v peak reverse voltage v rm 120 250 200 forward current i f 250 ma peak forward current i fm 625 total power dissipation , t s = 70 c p tot 350 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction - ambient 1) r thja 300 k/w junction - soldering point r thjs 230 1) package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bas 19 ... bas 21 oct-07-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol unit values typ. max. min. ac characteristics breakdown voltage i (br) = 100 a bas 19 bas 20 bas 21 v (br) 120 200 250 - - - v - - - forward voltage i f = 100 ma i f = 200 ma - - v f - - 1 1.25 reverse current v r = v rmax i r - - 100 na reverse current v r = v rmax , t a = 150 c i r a - - 100 ac characteristics diode capacitance v r = 0 v, f = 1 mhz c d - - 5 pf reverse recovery time i f = 30 ma, i r = 30 ma, r l = 100 , measured at i r = 3ma t rr - - 50 ns test circuit for reverse recovery time ehn00018 oscillograph f d.u.t. pulse generator: t p = 100ns, d = 0.05, t r = 0.6ns, r i = 50 oscillograph: r = 50 , t r = 0.35ns, c 1pf
bas 19 ... bas 21 oct-07-1999 3 reverse current i r = f ( t a ) 10 0 50 100 150 bas 19...21 ehb00027 t a r ?c 0 -2 5 5 5 max typ. a 10 -1 10 10 1 10 2 forward current i f = f ( t a *; t s ) * package mounted on epoxy 0 0 ehb00026 bas 19...21 f a t ; t s 50 100 ? c 150 t a s t 100 200 ma 300 forward voltage v f = f ( t a ) 0.0 0 bas 19...21 ehb00029 t a v f ? c 0.5 1.0 v 1.5 50 100 150 f = 625 ma ma 250 100 ma 10 ma forward current i f = f ( v f ) t a = 25c 0.0 0 ehb00028 bas 19...21 v f f 100 200 300 400 500 600 700 ma 800 0.5 1.0 v 1.5
bas 19 ... bas 21 oct-07-1999 4 reverse voltage v r = f ( t a ) 0 100 300 0 50 100 150 bas 19...21 ehb00031 v t a ? c 200 v r bas 21 bas 20 bas 19 peak forward current i fm = f ( t p ) t a = 25c ehb00032 -6 10 d = 0.005 0.01 0.02 t d = t bas 19...21 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p t p 0.05 0.1 0.2 t 10 10 -2 -1 a fm 10 10 10 0 1 2 permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 r thjs d = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 permissible pulse load i fmax / i fdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
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